Microwave dielectric properties of tunable capacitors employing bismuth zinc niobate thin films

Parallel plate capacitors employing Bi1.5Zn1.0Nb1.5O7 sBZNd thin films with the pyrochlore structure were fabricated on platinized sapphire substrates. The total device quality factor and capacitance were analyzed in the microwave frequency range sup to 20 GHzd by measuring reflection coefficients with a vector network analyzer. The parasitics due to the probe pads were extracted from the measurements. The total device quality factor, which included losses from the dielectric and the electrodes, was more than 200 up to 20 GHz for devices with an area of 100 mm2. Based on the frequency dependence of the impedance, series losses of unknown origin appear to dominate the device quality factor at higher frequencies. No significant dispersion in the device capacitance, as would be associated with a dielectric relaxation of BZN, was measured. The large electric field tunability of the permittivity of BZN films and the high device quality factors make these films attractive for voltage controlled microwave devices. © 2005 American Institute of Physics. fDOI: 10.1063/1.1883306g